| PART |
Description |
Maker |
| F5QA763M0M2QL-YA F5QA763M0M2QL-JA F5QA763M0M2QL-Q |
FBAR/SAW Devices (SAW Type)
|
Taiyo Yuden (U.S.A.), I...
|
| D5DA737M5K2H2 |
FBAR/SAW Devices (SAW Duplexers)
|
Taiyo Yuden (U.S.A.), I...
|
| 856356 |
Filter - Cellular Duplexer 836.5 MHz(Tx), 881.5 MHz(Rx), DUPLEXER
|
TriQuint Semiconductor, Inc.
|
| D6HH1G960BH97 |
FBAR Filter
|
Taiyo Yuden (U.S.A.), I...
|
| 942P24A CMD810C897 CMD810C897-942P24A |
DIELECTRIC DUPLEXER SAMPLE
DIELECTRIC DUPLEXER SAMPLE SPECIFICATION
|
SIPAT Co,Ltd
|
| MICROSMD050F MICROSMD050F-2 |
Specification Status: Released
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| NANOSMDM100 |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
